NEWS
 Cornell University produces first working transistor with 7 eV bandgapA Cornell University team used a semiconductor with a bandgap above 7 eV, doped with silicon, in the first working transistor. This material has the potential to increase energy efficiency in electric vehicles and power grids. This is a news summary compiled for the AiPulse newsletter — not the original article. The original article is at interestingengineering.com. Read the original article AI Critique → English (automatic translation) |